dmn3404l document number: ds31787 rev. 8 - 2 1 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 28m ? @ v gs = 10v 5.8a 42m ? @ v gs = 4.5v 4.8a 82m ? @ v gs = 3v 2.0a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? battery charging ? power management functions ? dc-dc converters ? portable power adaptors features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmn3404l-7 standard sot23 3000/tape & reel DMN3404LQ-7 automotive sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.htmlfor more in formation about diodes incorporated?s definitions of halogen- an d antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive and standard products are electrically and the rmally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_de finitions/. 5. for packaging details, go to diodes websit e at http://www.diodes.c om/products/packages.html. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic top view d g s source gate drain 34n = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) e3 chengdu a/t site shanghai a/t site 34n ym 34n ym ym y
dmn3404l document number: ds31787 rev. 8 - 2 2 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage (note 6 & 7) v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = -40c t a = +25c t a = +85c i d 4.6 4.2 3.0 a continuous drain current (note 7) v gs = 10v steady state t a = -40c t a = +25c t a = +85c i d 6.2 5.8 4.0 a continuous drain current (note 7) v gs = 4.5v steady state t a = -40c t a = +25c t a = +85c i d 5.2 4.8 3.2 a continuous drain current (note 7) v gs = 3v steady state t a = -40c t a = +25c t a = +85c i d 2.2 2.0 1.0 a pulsed drain current i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 6) p d 0.72 w thermal resistance, junction to ambient @t a = +25c r ja 173 c/w power dissipation (note 7) p d 1.4 w thermal resistance, junction to ambient @t a = +25c r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 6. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal bias to bottom layer 1inch square copper plate.
dmn3404l document number: ds31787 rev. 8 - 2 3 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1.0 1.5 2.0 v v ds = v gs , i d = 250 a static drain-source on-resistance t j = -40c (note 9) r ds(on) ? 23 27 ? v gs = 4.5v, i d = 4.8a ? 57 74 ? v gs =3v, i d =2a static drain-source on-resistance t j = +25c r ds(on) ? 24 28 m ? v gs = 10v, i d = 5.8a ? 33 42 v gs = 4.5v, i d = 4.8a ? 63 82 v gs =3v, i d =2a static drain-source on-resistance t j = +85c (note 9) r ds(on) ? 71 95 m ? v gs =3v, i d =2a forward transfer admittance |y fs | ? 10 ? s v ds = 5v, i d = 5.8a diode forward voltage v sd ? 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 10) input capacitance c iss ? 498 ? pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 52 ? pf reverse transfer capacitance c rss ? 45 ? pf gate resistance r g ? 1.75 2.8 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 3v) q g ? 3.8 5.3 nc v gs = 3v, v ds = 15v, i d = 1a total gate charge (v gs = 4.5v) q g ? 5.3 7.5 nc v gs = 10v/4.5v, v ds = 15v, i d = 5.8a total gate charge (v gs = 10v) q g ? 11.3 16 nc gate-source charge q gs ? 1.4 ? nc gate-drain charge q gd ? 2.1 ? nc turn-on delay time t d(on) ? 3.41 10 ns v dd = 15v, v gs = 10v, r l = 2.6 ? , r g = 3 ? turn-on rise time t r ? 6.18 13 ns turn-off delay time t d(off) ? 13.92 28 ns turn-off fall time t f ? 2.84 10 ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design and 25c data. not subject to production testing 10. guaranteed by design. not subject to production testing. v , drain-source voltage (v) ds figure 1 typical output characteristics i, d r ain c u r r en t (a) d 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 012345 v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs v = 2.5v gs v = 3.5v gs v = 4.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 t = -55c a t = 25c a t = 85c a t = -40c a t = 150c a v = 5v ds t = 125c a
dmn3404l document number: ds31787 rev. 8 - 2 4 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l r , drain-source on-resistance ( ) ds(on) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 0.01 0.02 0.03 0.04 0.05 02468101214161820 v = 4.5v gs v = 8.0v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2 4 6 8 10 12 14 16 18 20 t = -40c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t = -55c a r , drain-source on-resistance (normalized) dson -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 5 on-resistance variation with temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 v = 4.5v i = 5.0a gs d v = 10v i = 10a gs d r , d r ain-s o u r c e o n- r esistan c e ( ) dson ? -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 6 on-resistance variation with temperature 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 v = 10v i = 10a gs d v = 4.5v i = 5.0a gs d v = 4v i = 2a gs d figure 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) 0.8 1 1.2 1.4 1.6 1.8 2 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 25c a
dmn3404l document number: ds31787 rev. 8 - 2 5 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l 0 5 1015 202530 v , drain-source voltage (v) ds figure 9 typical total capacitance c , c a p a c ita n c e (pf) t 1 10 100 1000 10000 c iss c rss c oss f = 1mhz q , total gate charge (nc) g figure 10 gate-charge characteristics v, g a t e-s o u r c e v o l t a g e (v) gs 0 2 4 6 8 10 0 2 4 6 8 10 12 v = 15v i = 5.8a ds d 0.1 1 10 100 v , drain-source voltage (v) ds figure 11 safe operation area 0.01 0.1 1 10 100 i, d r ai n c u r r e n t (a) d r limited ds(on) t = 150c t = 25c single pulse j(max) a dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.1 1 10 100 v , drain-source voltage (v) ds figure 12 safe operation area i, d r ai n c u r r e n t (a) d 0.001 0.01 0.1 1 10 100 r limited ds(on) t = 150c t = +25c single pulse minimum recommended pad j(max) a dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r(t), t r a n sie n t t h e r mal r esis t a n c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 ? r (t) = r(t) * ? ja r r = 163c/w ? ? ja ja p(pk) t 1 t 2 t , pulse duration time (s) 1 figure 13 transient thermal response d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmn3404l document number: ds31787 rev. 8 - 2 6 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l gate charge test circuit and waveform switching test circuit and waveform
dmn3404l document number: ds31787 rev. 8 - 2 7 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. j k 1 k l 1 g a u g e p l a n e 0 . 2 5 h l m a l l 7 a c b d g f a suggested pad layout please see ap02001 at http://www.diodes.com /datasheets/ap02001.pdf for latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 ?? 8 all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z
dmn3404l document number: ds31787 rev. 8 - 2 8 of 8 www.diodes.com august 2013 ? diodes incorporated dmn3404l important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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